2N2907A
Manufacturer
MICRO COMMERCIAL CO
Data sheet
Data sheet
Specification
Specification
BJT TO92 60V PNP 0.625W 150C
BJT TO92 60V PNP 0.625W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
Description
Description
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. With a power dissipation capability of 400mW and a maximum junction temperature of 150°C, this transistor operates effectively at frequencies up to 200MHz. Packaged in a TO-92 form factor, it is ideal for through-hole mounting in compact designs.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. With a power dissipation capability of 400mW and a maximum junction temperature of 150°C, this transistor operates effectively at frequencies up to 200MHz. Packaged in a TO-92 form factor, it is ideal for through-hole mounting in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Other manufacturers
2N2907A is also available from the following manufacturersContact sales
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