2N2907A
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 40V 0.6A TO18
TRANS PNP 40V 0.6A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Through Hole TO-18
Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Through Hole TO-18
Description
Description
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, ensuring robust performance in through-hole mounting applications. With a power dissipation capability of 400mW, it is ideal for low to medium power applications, providing reliable operation in diverse environments.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, ensuring robust performance in through-hole mounting applications. With a power dissipation capability of 400mW, it is ideal for low to medium power applications, providing reliable operation in diverse environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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