2N2907A
Manufacturer
GOOD ARK
Data sheet
Data sheet
Specification
Specification
TRANSISTOR, PNP, -60V, -0.60A, T
TRANSISTOR, PNP, -60V, -0.60A, T
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
Description
Description
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for high current applications, with a maximum collector current of 600 mA and a collector-emitter voltage of 60 V. It operates at a transition frequency of 200 MHz and has a total power dissipation of 400 mW. The device is housed in a TO-18 package, suitable for through-hole mounting.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for high current applications, with a maximum collector current of 600 mA and a collector-emitter voltage of 60 V. It operates at a transition frequency of 200 MHz and has a total power dissipation of 400 mW. The device is housed in a TO-18 package, suitable for through-hole mounting.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N2907A is also available from the following manufacturersContact sales
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