2N2907A
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT TO92 60V 600MA PNP 0.625W
BJT TO92 60V 600MA PNP 0.625W
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 250MHz 625 mW Through Hole TO-92
Bipolar (BJT) Transistor PNP 60 V 600 mA 250MHz 625 mW Through Hole TO-92
Description
Description
The 2N2907A is a general-purpose PNP bipolar junction transistor (BJT) housed in a TO-92 package. It features a maximum collector-emitter voltage (VCEO) of -60 V, a collector current (IC) of -600 mA, and a power dissipation of 625 mW. With a gain-bandwidth product of 250 MHz and a DC current gain (hFE) of approximately 200, it is suitable for signal processing, switching, and amplification applications in commercial and industrial domains.
The 2N2907A is a general-purpose PNP bipolar junction transistor (BJT) housed in a TO-92 package. It features a maximum collector-emitter voltage (VCEO) of -60 V, a collector current (IC) of -600 mA, and a power dissipation of 625 mW. With a gain-bandwidth product of 250 MHz and a DC current gain (hFE) of approximately 200, it is suitable for signal processing, switching, and amplification applications in commercial and industrial domains.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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