2N2907A
Manufacturer
MICROCHIP TECHNOLOGY
Specification
Specification
TRANS PNP 60V 0.6A TO18
TRANS PNP 60V 0.6A TO18
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18
Description
Description
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. The device is housed in a TO-18 package, which allows for through-hole mounting. With a power dissipation capability of 500mW, the 2N2907A is ideal for low to medium power applications, ensuring reliable performance in diverse environments.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. The device is housed in a TO-18 package, which allows for through-hole mounting. With a power dissipation capability of 500mW, the 2N2907A is ideal for low to medium power applications, ensuring reliable performance in diverse environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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