2N2907A
Tillverkare
MICRO COMMERCIAL CO
Datablad
Datablad
Specifikation
Specifikation
BJT TO92 60V PNP 0.625W 150C
BJT TO92 60V PNP 0.625W 150C
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Genomgående hål TO-18
Bipolär (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. With a power dissipation capability of 400mW and a maximum junction temperature of 150°C, this transistor operates effectively at frequencies up to 200MHz. Packaged in a TO-92 form factor, it is ideal for through-hole mounting in compact designs.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. With a power dissipation capability of 400mW and a maximum junction temperature of 150°C, this transistor operates effectively at frequencies up to 200MHz. Packaged in a TO-92 form factor, it is ideal for through-hole mounting in compact designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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