2N2907A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 40V 0.6A TO18
TRANS PNP 40V 0.6A TO18
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Genomgående hål TO-18
Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, ensuring robust performance in through-hole mounting applications. With a power dissipation capability of 400mW, it is ideal for low to medium power applications, providing reliable operation in diverse environments.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA, making it suitable for various electronic circuits. The device is housed in a TO-18 metal can package, ensuring robust performance in through-hole mounting applications. With a power dissipation capability of 400mW, it is ideal for low to medium power applications, providing reliable operation in diverse environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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