2N2907A
Tillverkare
DIOTEC
Datablad
Datablad
Specifikation
Specifikation
BJT TO92 60V 600MA PNP 0.625W
BJT TO92 60V 600MA PNP 0.625W
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 600 mA 250MHz 625 mW Genomgående hål TO-92
Bipolär (BJT) Transistor PNP 60 V 600 mA 250MHz 625 mW Genomgående hål TO-92
Beskrivning (eng)
Beskrivning (eng)
The 2N2907A is a general-purpose PNP bipolar junction transistor (BJT) housed in a TO-92 package. It features a maximum collector-emitter voltage (VCEO) of -60 V, a collector current (IC) of -600 mA, and a power dissipation of 625 mW. With a gain-bandwidth product of 250 MHz and a DC current gain (hFE) of approximately 200, it is suitable for signal processing, switching, and amplification applications in commercial and industrial domains.
The 2N2907A is a general-purpose PNP bipolar junction transistor (BJT) housed in a TO-92 package. It features a maximum collector-emitter voltage (VCEO) of -60 V, a collector current (IC) of -600 mA, and a power dissipation of 625 mW. With a gain-bandwidth product of 250 MHz and a DC current gain (hFE) of approximately 200, it is suitable for signal processing, switching, and amplification applications in commercial and industrial domains.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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