2N2907A
Tillverkare
MICROCHIP TECHNOLOGY
Specifikation
Specifikation
TRANS PNP 60V 0.6A TO18
TRANS PNP 60V 0.6A TO18
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 60 V 600 mA 500 mW Genomgående hål TO-18
Bipolär (BJT) Transistor PNP 60 V 600 mA 500 mW Genomgående hål TO-18
Beskrivning (eng)
Beskrivning (eng)
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. The device is housed in a TO-18 package, which allows for through-hole mounting. With a power dissipation capability of 500mW, the 2N2907A is ideal for low to medium power applications, ensuring reliable performance in diverse environments.
The 2N2907A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for a variety of electronic circuits. The device is housed in a TO-18 package, which allows for through-hole mounting. With a power dissipation capability of 500mW, the 2N2907A is ideal for low to medium power applications, ensuring reliable performance in diverse environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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