MMBT3906,215
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 40V 0.2A TO236AB
TRANS PNP 40V 0.2A TO236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general switching and amplification applications. It features a collector-emitter voltage (VCEO) of -40 V, a collector current (IC) of -200 mA, and a transition frequency (fT) of 250 MHz. This surface-mounted device (SMD) comes in a compact TO-236AB package, making it suitable for space-constrained applications.
The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general switching and amplification applications. It features a collector-emitter voltage (VCEO) of -40 V, a collector current (IC) of -200 mA, and a transition frequency (fT) of 250 MHz. This surface-mounted device (SMD) comes in a compact TO-236AB package, making it suitable for space-constrained applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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