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MMBT3906,215

Manufacturer

NEXPERIA

data-sheet
Data sheet
Data sheet
MMBT3906 is utilized in general switching and amplification applications across various domains, including automotive and consumer electronics. Its robust specifications, such as a collector-emitter voltage of -40 V and a collector current of -200 mA, make it ideal for reliable performance in electronic circuits.
Specification
Specification
TRANS PNP 40V 0.2A TO236AB
TRANS PNP 40V 0.2A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW surface-mounted TO-236AB
Description
Description
The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general switching and amplification applications. It features a collector-emitter voltage (VCEO) of -40 V, a collector current (IC) of -200 mA, and a transition frequency (fT) of 250 MHz. This surface-mounted device (SMD) comes in a compact TO-236AB package, making it suitable for space-constrained applications.
The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general switching and amplification applications. It features a collector-emitter voltage (VCEO) of -40 V, a collector current (IC) of -200 mA, and a transition frequency (fT) of 250 MHz. This surface-mounted device (SMD) comes in a compact TO-236AB package, making it suitable for space-constrained applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Other manufacturers
MMBT3906,215 is also available from the following manufacturers
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