MMBT3906,215
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA MMBT3906 - SMALL SIGNAL
NEXPERIA MMBT3906 - SMALL SIGNAL
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The NEXPERIA MMBT3906 is a small signal PNP bipolar junction transistor (BJT) designed for high-frequency applications. It features a maximum collector-emitter voltage of 40 V, a collector current rating of 200 mA, and a transition frequency of 250 MHz, making it suitable for various amplification and switching tasks. The device is housed in a compact TO-236AB surface mount package, allowing for efficient space utilization on printed circuit boards. With a power dissipation capability of 250 mW, it is ideal for low-power applications.
The NEXPERIA MMBT3906 is a small signal PNP bipolar junction transistor (BJT) designed for high-frequency applications. It features a maximum collector-emitter voltage of 40 V, a collector current rating of 200 mA, and a transition frequency of 250 MHz, making it suitable for various amplification and switching tasks. The device is housed in a compact TO-236AB surface mount package, allowing for efficient space utilization on printed circuit boards. With a power dissipation capability of 250 mW, it is ideal for low-power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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