FDD1600N10ALZ
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 6.8A DPAK
MOSFET N-CH 100V 6.8A DPAK
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDD1600N10ALZ is a 100V N-Channel MOSFET featuring a low on-state resistance (RDS(on)) of < 124 mΩ at VGS=10V and < 175 mΩ at VGS=5V. It offers a continuous drain current of 6.8A at TC=25°C and fast switching capabilities with a low gate charge of 2.78 nC. This device is RoHS compliant and suitable for various applications.
The FDD1600N10ALZ is a 100V N-Channel MOSFET featuring a low on-state resistance (RDS(on)) of < 124 mΩ at VGS=10V and < 175 mΩ at VGS=5V. It offers a continuous drain current of 6.8A at TC=25°C and fast switching capabilities with a low gate charge of 2.78 nC. This device is RoHS compliant and suitable for various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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