FDD1600N10ALZ
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 6.8A TO252
MOSFET N-CH 100V 6.8A TO252
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 6.8A (Tc) 14.9W (Tc) ytmonterad TO-252AA
N-Kanal 100 V 6.8A (Tc) 14.9W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The FDD1600N10ALZ is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100 V and a continuous Drain Current (ID) of 6.8 A. It features a low on-state resistance (RDS(on)) of 124 mΩ at VGS = 10 V and 175 mΩ at VGS = 5 V. The device is housed in a TO-252AA package and is suitable for applications requiring fast switching and low gate charge.
The FDD1600N10ALZ is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100 V and a continuous Drain Current (ID) of 6.8 A. It features a low on-state resistance (RDS(on)) of 124 mΩ at VGS = 10 V and 175 mΩ at VGS = 5 V. The device is housed in a TO-252AA package and is suitable for applications requiring fast switching and low gate charge.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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