FDD1600N10ALZ
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 6.8A TO252
MOSFET N-CH 100V 6.8A TO252
Detailed specification
Detailed specification
N-Channel 100 V 6.8A (Tc) 14.9W (Tc) surface-mounted TO-252AA
N-Channel 100 V 6.8A (Tc) 14.9W (Tc) surface-mounted TO-252AA
Description
Description
The FDD1600N10ALZ is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100 V and a continuous Drain Current (ID) of 6.8 A. It features a low on-state resistance (RDS(on)) of 124 mΩ at VGS = 10 V and 175 mΩ at VGS = 5 V. The device is housed in a TO-252AA package and is suitable for applications requiring fast switching and low gate charge.
The FDD1600N10ALZ is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDSS) of 100 V and a continuous Drain Current (ID) of 6.8 A. It features a low on-state resistance (RDS(on)) of 124 mΩ at VGS = 10 V and 175 mΩ at VGS = 5 V. The device is housed in a TO-252AA package and is suitable for applications requiring fast switching and low gate charge.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Other manufacturers
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