FDD1600N10ALZ
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 6.8A DPAK
MOSFET N-CH 100V 6.8A DPAK
Detailed specification
Detailed specification
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Description
Description
The FDD1600N10ALZ is a 100V N-Channel MOSFET featuring a low on-state resistance (RDS(on)) of < 124 mΩ at VGS=10V and < 175 mΩ at VGS=5V. It offers a continuous drain current of 6.8A at TC=25°C and fast switching capabilities with a low gate charge of 2.78 nC. This device is RoHS compliant and suitable for various applications.
The FDD1600N10ALZ is a 100V N-Channel MOSFET featuring a low on-state resistance (RDS(on)) of < 124 mΩ at VGS=10V and < 175 mΩ at VGS=5V. It offers a continuous drain current of 6.8A at TC=25°C and fast switching capabilities with a low gate charge of 2.78 nC. This device is RoHS compliant and suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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