2N3507
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
NPN POWER SILICON TRANSISTORS
NPN POWER SILICON TRANSISTORS
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 50 V 3 A 1 W Genomgående hål TO-39
Bipolär (BJT) Transistor NPN 50 V 3 A 1 W Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N3507 is a high-performance NPN power silicon transistor designed for various applications requiring reliable switching and amplification. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 3 A, with a power dissipation capability of 1 W. Packaged in a TO-39 through-hole configuration, it is suitable for use in power amplifiers, switching circuits, and other electronic applications where robust performance is essential.
The 2N3507 is a high-performance NPN power silicon transistor designed for various applications requiring reliable switching and amplification. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 3 A, with a power dissipation capability of 1 W. Packaged in a TO-39 through-hole configuration, it is suitable for use in power amplifiers, switching circuits, and other electronic applications where robust performance is essential.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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