2N3507
Tillverkare
CENTRAL SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
2N3507
2N3507
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 50 V 3 A 3 MHz 1 W Genomgående hål TO-39
Bipolar (BJT) Transistor PNP 50 V 3 A 3 MHz 1 W Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N3507 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) rating of 3 A, and a power dissipation of 1 W. The transistor operates at a frequency of up to 3 MHz and is housed in a TO-39 through-hole package, making it suitable for various electronic circuits requiring reliable performance.
The 2N3507 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) rating of 3 A, and a power dissipation of 1 W. The transistor operates at a frequency of up to 3 MHz and is housed in a TO-39 through-hole package, making it suitable for various electronic circuits requiring reliable performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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