2N3507
Manufacturer
CENTRAL SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
2N3507
2N3507
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 3 A 3 MHz 1 W Through Hole TO-39
Bipolar (BJT) Transistor PNP 50 V 3 A 3 MHz 1 W Through Hole TO-39
Description
Description
The 2N3507 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) rating of 3 A, and a power dissipation of 1 W. The transistor operates at a frequency of up to 3 MHz and is housed in a TO-39 through-hole package, making it suitable for various electronic circuits requiring reliable performance.
The 2N3507 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) rating of 3 A, and a power dissipation of 1 W. The transistor operates at a frequency of up to 3 MHz and is housed in a TO-39 through-hole package, making it suitable for various electronic circuits requiring reliable performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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