2N3507
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
NPN POWER SILICON TRANSISTORS
NPN POWER SILICON TRANSISTORS
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 3 A 1 W Through Hole TO-39
Bipolar (BJT) Transistor NPN 50 V 3 A 1 W Through Hole TO-39
Description
Description
The 2N3507 is a high-performance NPN power silicon transistor designed for various applications requiring reliable switching and amplification. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 3 A, with a power dissipation capability of 1 W. Packaged in a TO-39 through-hole configuration, it is suitable for use in power amplifiers, switching circuits, and other electronic applications where robust performance is essential.
The 2N3507 is a high-performance NPN power silicon transistor designed for various applications requiring reliable switching and amplification. This bipolar junction transistor (BJT) operates at a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 3 A, with a power dissipation capability of 1 W. Packaged in a TO-39 through-hole configuration, it is suitable for use in power amplifiers, switching circuits, and other electronic applications where robust performance is essential.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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