MJ11033G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP DARL 120V 50A TO204
TRANS PNP DARL 120V 50A TO204
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Description
Description
The MJ11033G is a PNP Darlington transistor designed for high-current applications, featuring a collector-emitter voltage of 120 V and a continuous collector current of 50 A. It offers a high DC current gain (hFE) of 1000 minimum at 25 A and is housed in a TO-204 (TO-3) package, suitable for through-hole mounting. With a power dissipation of 300 W and a junction temperature rating of +200°C, it is ideal for robust amplifier circuits.
The MJ11033G is a PNP Darlington transistor designed for high-current applications, featuring a collector-emitter voltage of 120 V and a continuous collector current of 50 A. It offers a high DC current gain (hFE) of 1000 minimum at 25 A and is housed in a TO-204 (TO-3) package, suitable for through-hole mounting. With a power dissipation of 300 W and a junction temperature rating of +200°C, it is ideal for robust amplifier circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Other manufacturers
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