MJ11033G
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
HIGH-CURRENT PNP SILICON POWER T
HIGH-CURRENT PNP SILICON POWER T
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Description
Description
The MJ11033G is a high-current PNP silicon power transistor designed for use in high-power applications. This bipolar junction transistor (BJT) features a Darlington configuration, providing high current gain and efficiency. With a maximum collector-emitter voltage of 120 V, a continuous collector current rating of 50 A, and a power dissipation capability of 300 W, it is suitable for demanding environments. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in various electronic circuits.
The MJ11033G is a high-current PNP silicon power transistor designed for use in high-power applications. This bipolar junction transistor (BJT) features a Darlington configuration, providing high current gain and efficiency. With a maximum collector-emitter voltage of 120 V, a continuous collector current rating of 50 A, and a power dissipation capability of 300 W, it is suitable for demanding environments. The device is housed in a TO-204 (TO-3) package, ensuring robust thermal performance and reliability in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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