FDN302P
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 20V 2.4A SOT23
MOSFET P-CH 20V 2.4A SOT23
Detailed specification
Detailed specification
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Description
Description
The FDN302P is a P-Channel MOSFET optimized for power management applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -2.4A. It offers low RDS(ON) values of 55mΩ at VGS = -4.5V and 80mΩ at VGS = -2.5V, ensuring efficient performance in compact designs. The device is housed in a SOT23 package, providing fast switching speeds and high power handling capabilities.
The FDN302P is a P-Channel MOSFET optimized for power management applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -2.4A. It offers low RDS(ON) values of 55mΩ at VGS = -4.5V and 80mΩ at VGS = -2.5V, ensuring efficient performance in compact designs. The device is housed in a SOT23 package, providing fast switching speeds and high power handling capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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