FDN302P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 20V 2.4A SOT23
MOSFET P-CH 20V 2.4A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN302P is a P-Channel MOSFET optimized for power management applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -2.4A. It offers low RDS(ON) values of 55mΩ at VGS = -4.5V and 80mΩ at VGS = -2.5V, ensuring efficient performance in compact designs. The device is housed in a SOT23 package, providing fast switching speeds and high power handling capabilities.
The FDN302P is a P-Channel MOSFET optimized for power management applications, featuring a maximum Drain-Source Voltage of -20V and a continuous Drain Current of -2.4A. It offers low RDS(ON) values of 55mΩ at VGS = -4.5V and 80mΩ at VGS = -2.5V, ensuring efficient performance in compact designs. The device is housed in a SOT23 package, providing fast switching speeds and high power handling capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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