FDN302P
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 20V 2.4A SUPERSOT3
MOSFET P-CH 20V 2.4A SUPERSOT3
Detailed specification
Detailed specification
P-Channel 20 V 2.4A (Ta) 500mW (Ta) surface-mounted SOT-23-3
P-Channel 20 V 2.4A (Ta) 500mW (Ta) surface-mounted SOT-23-3
Description
Description
The FDN302P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 2.4A at ambient temperature (Ta). This device is housed in a compact Supersot3 package, specifically the SOT-23-3, which allows for space-saving designs in electronic circuits. With a power dissipation capability of 500mW (Ta), it is suitable for various low-voltage applications, ensuring reliable performance in demanding environments.
The FDN302P from onsemi is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 2.4A at ambient temperature (Ta). This device is housed in a compact Supersot3 package, specifically the SOT-23-3, which allows for space-saving designs in electronic circuits. With a power dissipation capability of 500mW (Ta), it is suitable for various low-voltage applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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