SP000928260
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
MOSFET:er N-Ch 650V 6A DPAK-2
MOSFET:er N-Ch 650V 6A DPAK-2
Beskrivning (eng)
Beskrivning (eng)
The IPD65R660CFDA is a 650V N-channel MOSFET designed for high-voltage power applications. It features ultra-fast body diode, low RDS(on) of 0.66 Ω, and high commutation ruggedness, making it suitable for efficient resonant switching applications. The device supports a continuous drain current of 6A and a pulsed drain current of 17A.
The IPD65R660CFDA is a 650V N-channel MOSFET designed for high-voltage power applications. It features ultra-fast body diode, low RDS(on) of 0.66 Ω, and high commutation ruggedness, making it suitable for efficient resonant switching applications. The device supports a continuous drain current of 6A and a pulsed drain current of 17A.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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