logo

SP000928260

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
IPD65R660CFDA is designed for high-voltage power applications, particularly in resonant switching circuits. Its features make it ideal for use in industrial power supplies, automotive systems, and consumer electronics, where efficiency and reliability are critical.
Detailed specification
Detailed specification
MOSFET:er N-Ch 650V 6A DPAK-2
MOSFET:er N-Ch 650V 6A DPAK-2
Description
Description
The IPD65R660CFDA is a 650V N-channel MOSFET designed for high-voltage power applications. It features ultra-fast body diode, low RDS(on) of 0.66 Ω, and high commutation ruggedness, making it suitable for efficient resonant switching applications. The device supports a continuous drain current of 6A and a pulsed drain current of 17A.
The IPD65R660CFDA is a 650V N-channel MOSFET designed for high-voltage power applications. It features ultra-fast body diode, low RDS(on) of 0.66 Ω, and high commutation ruggedness, making it suitable for efficient resonant switching applications. The device supports a continuous drain current of 6A and a pulsed drain current of 17A.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Nicklas or one of our other skilled sales representatives. They'll help you find the right service option.
Nicklas Johansson
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.