SP000928260
Manufacturer
INFINEON
Data sheet
Data sheet
Detailed specification
Detailed specification
MOSFET:er N-Ch 650V 6A DPAK-2
MOSFET:er N-Ch 650V 6A DPAK-2
Description
Description
The IPD65R660CFDA is a 650V N-channel MOSFET designed for high-voltage power applications. It features ultra-fast body diode, low RDS(on) of 0.66 Ω, and high commutation ruggedness, making it suitable for efficient resonant switching applications. The device supports a continuous drain current of 6A and a pulsed drain current of 17A.
The IPD65R660CFDA is a 650V N-channel MOSFET designed for high-voltage power applications. It features ultra-fast body diode, low RDS(on) of 0.66 Ω, and high commutation ruggedness, making it suitable for efficient resonant switching applications. The device supports a continuous drain current of 6A and a pulsed drain current of 17A.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Nicklas or one of our other skilled sales representatives. They'll help you find the right service option.C