SCTW90N65G2V
Tillverkare
ST MICROELECTRONICS
Detaljerad specifikation
Detaljerad specifikation
SiC-MOSFET: kiselkarbid Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
SiC-MOSFET: kiselkarbid Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
Beskrivning (eng)
Beskrivning (eng)
The SCTW90N65G2V is a silicon carbide Power MOSFET featuring a voltage rating of 650 V, a continuous drain current of 119 A, and a typical on-state resistance (RDS(on)) of 18 mΩ at TJ = 25 °C. This device is designed for high efficiency and fast switching applications, with a maximum operating junction temperature of 200 °C.
The SCTW90N65G2V is a silicon carbide Power MOSFET featuring a voltage rating of 650 V, a continuous drain current of 119 A, and a typical on-state resistance (RDS(on)) of 18 mΩ at TJ = 25 °C. This device is designed for high efficiency and fast switching applications, with a maximum operating junction temperature of 200 °C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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