SCTW90N65G2V
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Detailed specification
Detailed specification
SiC-MOSFET: Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
SiC-MOSFET: Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
Description
Description
The SCTW90N65G2V is a silicon carbide Power MOSFET featuring a voltage rating of 650 V, a continuous drain current of 119 A, and a typical on-state resistance (RDS(on)) of 18 mΩ at TJ = 25 °C. This device is designed for high efficiency and fast switching applications, with a maximum operating junction temperature of 200 °C.
The SCTW90N65G2V is a silicon carbide Power MOSFET featuring a voltage rating of 650 V, a continuous drain current of 119 A, and a typical on-state resistance (RDS(on)) of 18 mΩ at TJ = 25 °C. This device is designed for high efficiency and fast switching applications, with a maximum operating junction temperature of 200 °C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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