SBC807-40LT3G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Bipolära transistorer - BJT SS GP XSTR SPCL TR
Bipolära transistorer - BJT SS GP XSTR SPCL TR
Beskrivning (eng)
Beskrivning (eng)
The SBC807-40LT3G is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of -45 V, a collector current of -500 mA, and a DC current gain (hFE) of 250 to 600. The device is AEC-Q101 qualified, Pb-free, and RoHS compliant, making it suitable for automotive and other demanding applications.
The SBC807-40LT3G is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of -45 V, a collector current of -500 mA, and a DC current gain (hFE) of 250 to 600. The device is AEC-Q101 qualified, Pb-free, and RoHS compliant, making it suitable for automotive and other demanding applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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