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SBC807-40LT3G

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ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
SBC807-40LT3G is utilized in automotive and industrial applications requiring reliable performance under varying conditions. Its robust specifications, including a maximum collector-emitter voltage of -45 V and a continuous collector current of -500 mA, make it ideal for switching and amplification tasks in electronic circuits.
Detailed specification
Detailed specification
Bipolar transistors - BJT SS GP XSTR SPCL TR
Bipolar transistors - BJT SS GP XSTR SPCL TR
Description
Description
The SBC807-40LT3G is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of -45 V, a collector current of -500 mA, and a DC current gain (hFE) of 250 to 600. The device is AEC-Q101 qualified, Pb-free, and RoHS compliant, making it suitable for automotive and other demanding applications.
The SBC807-40LT3G is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of -45 V, a collector current of -500 mA, and a DC current gain (hFE) of 250 to 600. The device is AEC-Q101 qualified, Pb-free, and RoHS compliant, making it suitable for automotive and other demanding applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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