RFP12N10L
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 12A TO220-3
MOSFET N-CH 100V 12A TO220-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 12A (Tc) 60W (Tc) Genomgående hål TO-220-3
N-Kanal 100 V 12A (Tc) 60W (Tc) Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The RFP12N10L is an N-Channel MOSFET designed for logic level applications, featuring a maximum Drain-Source Voltage of 100V and a continuous Drain Current of 12A. It has an on-state resistance (RDS(on)) of 0.200Ω and is optimized for 5V gate drives, making it suitable for automotive switching, programmable controllers, and solenoid drivers. The device is housed in a TO-220-3 package and supports high-speed switching with a maximum power dissipation of 60W.
The RFP12N10L is an N-Channel MOSFET designed for logic level applications, featuring a maximum Drain-Source Voltage of 100V and a continuous Drain Current of 12A. It has an on-state resistance (RDS(on)) of 0.200Ω and is optimized for 5V gate drives, making it suitable for automotive switching, programmable controllers, and solenoid drivers. The device is housed in a TO-220-3 package and supports high-speed switching with a maximum power dissipation of 60W.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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