RFP12N10L
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 12A TO220-3
MOSFET N-CH 100V 12A TO220-3
Detailed specification
Detailed specification
N-Channel 100 V 12A (Tc) 60W (Tc) Through Hole TO-220-3
N-Channel 100 V 12A (Tc) 60W (Tc) Through Hole TO-220-3
Description
Description
The RFP12N10L is an N-Channel MOSFET designed for logic level applications, featuring a maximum Drain-Source Voltage of 100V and a continuous Drain Current of 12A. It has an on-state resistance (RDS(on)) of 0.200Ω and is optimized for 5V gate drives, making it suitable for automotive switching, programmable controllers, and solenoid drivers. The device is housed in a TO-220-3 package and supports high-speed switching with a maximum power dissipation of 60W.
The RFP12N10L is an N-Channel MOSFET designed for logic level applications, featuring a maximum Drain-Source Voltage of 100V and a continuous Drain Current of 12A. It has an on-state resistance (RDS(on)) of 0.200Ω and is optimized for 5V gate drives, making it suitable for automotive switching, programmable controllers, and solenoid drivers. The device is housed in a TO-220-3 package and supports high-speed switching with a maximum power dissipation of 60W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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