PBLS6005D,115
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
NEXPERIA PBLS6005D - SMALL SIGNA
NEXPERIA PBLS6005D - SMALL SIGNA
Detaljerad specifikation
Detaljerad specifikation
Förbise Bipolär Transistor (BJT) 1 NPN Förbise, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Ytmonterad 6-TSOP
Förbise Bipolär Transistor (BJT) 1 NPN Förbise, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Ytmonterad 6-TSOP
Beskrivning (eng)
Beskrivning (eng)
The Nexperia PBLS6005D is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration. It operates at a maximum voltage of 50V for the NPN and 60V for the PNP, with a collector current rating of 100mA and a maximum power dissipation of 600mW. This device supports high-frequency applications with a transition frequency of 185MHz. Packaged in a compact 6-TSOP surface mount configuration, it is ideal for space-constrained designs requiring efficient signal amplification and switching capabilities.
The Nexperia PBLS6005D is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration. It operates at a maximum voltage of 50V for the NPN and 60V for the PNP, with a collector current rating of 100mA and a maximum power dissipation of 600mW. This device supports high-frequency applications with a transition frequency of 185MHz. Packaged in a compact 6-TSOP surface mount configuration, it is ideal for space-constrained designs requiring efficient signal amplification and switching capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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