PBLS6005D,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
NEXPERIA PBLS6005D - SMALL SIGNA
NEXPERIA PBLS6005D - SMALL SIGNA
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Surface Mount 6-TSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 700mA 185MHz 600mW Surface Mount 6-TSOP
Description
Description
The Nexperia PBLS6005D is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration. It operates at a maximum voltage of 50V for the NPN and 60V for the PNP, with a collector current rating of 100mA and a maximum power dissipation of 600mW. This device supports high-frequency applications with a transition frequency of 185MHz. Packaged in a compact 6-TSOP surface mount configuration, it is ideal for space-constrained designs requiring efficient signal amplification and switching capabilities.
The Nexperia PBLS6005D is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration. It operates at a maximum voltage of 50V for the NPN and 60V for the PNP, with a collector current rating of 100mA and a maximum power dissipation of 600mW. This device supports high-frequency applications with a transition frequency of 185MHz. Packaged in a compact 6-TSOP surface mount configuration, it is ideal for space-constrained designs requiring efficient signal amplification and switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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