MJE350
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 300V 0.5A SOT32-3
TRANS PNP 300V 0.5A SOT32-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 300 V 500 mA 20.8 W Genomgående hål SOT-32-3
Bipolär (BJT) Transistor PNP 300 V 500 mA 20.8 W Genomgående hål SOT-32-3
Beskrivning (eng)
Beskrivning (eng)
The MJE350 is a PNP bipolar junction transistor (BJT) designed for medium power applications, featuring a collector-emitter voltage of 300 V and a collector current of 0.5 A. It is housed in a SOT-32 package and has a total power dissipation of 20.8 W, making it suitable for linear and switching applications in industrial environments.
The MJE350 is a PNP bipolar junction transistor (BJT) designed for medium power applications, featuring a collector-emitter voltage of 300 V and a collector current of 0.5 A. It is housed in a SOT-32 package and has a total power dissipation of 20.8 W, making it suitable for linear and switching applications in industrial environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Kontakta säljare
Kontakta Nicklas eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K