MJE350
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS PNP 300V 0.5A SOT32-3
TRANS PNP 300V 0.5A SOT32-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 300 V 500 mA 20.8 W Through Hole SOT-32-3
Bipolar (BJT) Transistor PNP 300 V 500 mA 20.8 W Through Hole SOT-32-3
Description
Description
The MJE350 is a PNP bipolar junction transistor (BJT) designed for medium power applications, featuring a collector-emitter voltage of 300 V and a collector current of 0.5 A. It is housed in a SOT-32 package and has a total power dissipation of 20.8 W, making it suitable for linear and switching applications in industrial environments.
The MJE350 is a PNP bipolar junction transistor (BJT) designed for medium power applications, featuring a collector-emitter voltage of 300 V and a collector current of 0.5 A. It is housed in a SOT-32 package and has a total power dissipation of 20.8 W, making it suitable for linear and switching applications in industrial environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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