KSC5603DTU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 800V 3A TO220-3
TRANS NPN 800V 3A TO220-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 800 V 3 A 5MHz 100 W Genomgående hål TO-220-3
Bipolär (BJT) Transistor NPN 800 V 3 A 5MHz 100 W Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The KSC5603DTU is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 800 V, a collector current of 3 A, and a power dissipation capability of 100 W. With a current gain bandwidth product of 5 MHz, it is suitable for high-speed switching applications. The TO-220-3 package allows for efficient thermal management.
The KSC5603DTU is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 800 V, a collector current of 3 A, and a power dissipation capability of 100 W. With a current gain bandwidth product of 5 MHz, it is suitable for high-speed switching applications. The TO-220-3 package allows for efficient thermal management.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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