KSC5603DTU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 800V 3A TO220-3
TRANS NPN 800V 3A TO220-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 800 V 3 A 5MHz 100 W Through Hole TO-220-3
Bipolar (BJT) Transistor NPN 800 V 3 A 5MHz 100 W Through Hole TO-220-3
Description
Description
The KSC5603DTU is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 800 V, a collector current of 3 A, and a power dissipation capability of 100 W. With a current gain bandwidth product of 5 MHz, it is suitable for high-speed switching applications. The TO-220-3 package allows for efficient thermal management.
The KSC5603DTU is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 800 V, a collector current of 3 A, and a power dissipation capability of 100 W. With a current gain bandwidth product of 5 MHz, it is suitable for high-speed switching applications. The TO-220-3 package allows for efficient thermal management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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