KSB1151YSTU
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 5A TO126-3
TRANS PNP 60V 5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Genom hål TO-126-3
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Genom hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The KSB1151YSTU is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates at a maximum voltage of 60V and can handle a continuous current of up to 5A, making it suitable for various power management tasks. With a power dissipation capability of 1.3W, this transistor is housed in a TO-126-3 package, which allows for efficient thermal management and easy integration into circuit designs. Its through-hole configuration ensures reliable connections in electronic assemblies.
The KSB1151YSTU is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates at a maximum voltage of 60V and can handle a continuous current of up to 5A, making it suitable for various power management tasks. With a power dissipation capability of 1.3W, this transistor is housed in a TO-126-3 package, which allows for efficient thermal management and easy integration into circuit designs. Its through-hole configuration ensures reliable connections in electronic assemblies.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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