KSB1151YSTU
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 60V 5A TO126-3
TRANS PNP 60V 5A TO126-3
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Genomgående hål TO-126-3
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Genomgående hål TO-126-3
Beskrivning (eng)
Beskrivning (eng)
The KSB1151YSTU is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 5 A, and a power dissipation capability of 1.3 W. This TO-126-3 through-hole device is suitable for various switching and amplification tasks in electronic circuits.
The KSB1151YSTU is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 5 A, and a power dissipation capability of 1.3 W. This TO-126-3 through-hole device is suitable for various switching and amplification tasks in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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