JAN2N2219A
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 50V 0.8A TO39
TRANS NPN 50V 0.8A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 50 V 800 mA 800 mW Genomgående hål TO-39
Bipolär (BJT) Transistor NPN 50 V 800 mA 800 mW Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The JAN2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 800mA, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800mW, it is ideal for use in circuits requiring efficient signal processing and control.
The JAN2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 800mA, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800mW, it is ideal for use in circuits requiring efficient signal processing and control.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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