JAN2N2219A
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 50V 0.8A TO39
TRANS NPN 50V 0.8A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39
Bipolar (BJT) Transistor NPN 50 V 800 mA 800 mW Through Hole TO-39
Description
Description
The JAN2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 800mA, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800mW, it is ideal for use in circuits requiring efficient signal processing and control.
The JAN2N2219A is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 800mA, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800mW, it is ideal for use in circuits requiring efficient signal processing and control.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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