IXFX32N80Q3
Tillverkare
LITTELFUSE
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 800V 32A PLUS247-3
MOSFET N-CH 800V 32A PLUS247-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 800 V 32A (Tc) 1000W (Tc) Genomgående hål ytmonterad PLUS247™-3
N-Kanal 800 V 32A (Tc) 1000W (Tc) Genomgående hål ytmonterad PLUS247™-3
Beskrivning (eng)
Beskrivning (eng)
The IXFX32N80Q3 is an N-Channel MOSFET rated for 800V and 32A, designed for high power applications. It features a low RDS(on) of 270 mΩ and a maximum power dissipation of 1000W. The device operates efficiently with a gate threshold voltage of 3.0V to 6.0V and is suitable for various applications including DC-DC converters and battery chargers.
The IXFX32N80Q3 is an N-Channel MOSFET rated for 800V and 32A, designed for high power applications. It features a low RDS(on) of 270 mΩ and a maximum power dissipation of 1000W. The device operates efficiently with a gate threshold voltage of 3.0V to 6.0V and is suitable for various applications including DC-DC converters and battery chargers.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Patrick eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K