IXFX32N80Q3
Manufacturer
LITTELFUSE
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 800V 32A PLUS247-3
MOSFET N-CH 800V 32A PLUS247-3
Detailed specification
Detailed specification
N-Channel 800 V 32A (Tc) 1000W (Tc) Through Hole surface-mounted PLUS247™-3
N-Channel 800 V 32A (Tc) 1000W (Tc) Through Hole surface-mounted PLUS247™-3
Description
Description
The IXFX32N80Q3 is an N-Channel MOSFET rated for 800V and 32A, designed for high power applications. It features a low RDS(on) of 270 mΩ and a maximum power dissipation of 1000W. The device operates efficiently with a gate threshold voltage of 3.0V to 6.0V and is suitable for various applications including DC-DC converters and battery chargers.
The IXFX32N80Q3 is an N-Channel MOSFET rated for 800V and 32A, designed for high power applications. It features a low RDS(on) of 270 mΩ and a maximum power dissipation of 1000W. The device operates efficiently with a gate threshold voltage of 3.0V to 6.0V and is suitable for various applications including DC-DC converters and battery chargers.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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