ISL9V5045S3ST-F085
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
IGBT 480V 51A 300W D2PAK
IGBT 480V 51A 300W D2PAK
Detaljerad specifikation
Detaljerad specifikation
IGBT 480 V 51 A 300 W ytmonterad TO-263 (D2PAK)
IGBT 480 V 51 A 300 W ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The ISL9V5045S3ST-F085 from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. This device operates at a voltage rating of 480V and can handle a continuous current of 51A, making it suitable for high-power applications. With a power dissipation capability of 300W, it is housed in a D2PAK package, which is a surface-mounted configuration that allows for efficient thermal management and compact design in electronic circuits. Its robust construction ensures reliability in demanding environments.
The ISL9V5045S3ST-F085 from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. This device operates at a voltage rating of 480V and can handle a continuous current of 51A, making it suitable for high-power applications. With a power dissipation capability of 300W, it is housed in a D2PAK package, which is a surface-mounted configuration that allows for efficient thermal management and compact design in electronic circuits. Its robust construction ensures reliability in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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