ISL9V5045S3ST-F085
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
IGBT 480V 51A 300W D2PAK
IGBT 480V 51A 300W D2PAK
Detailed specification
Detailed specification
IGBT 480 V 51 A 300 W surface-mounted TO-263 (D2PAK)
IGBT 480 V 51 A 300 W surface-mounted TO-263 (D2PAK)
Description
Description
The ISL9V5045S3ST-F085 from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. This device operates at a voltage rating of 480V and can handle a continuous current of 51A, making it suitable for high-power applications. With a power dissipation capability of 300W, it is housed in a D2PAK package, which is a surface-mounted configuration that allows for efficient thermal management and compact design in electronic circuits. Its robust construction ensures reliability in demanding environments.
The ISL9V5045S3ST-F085 from onsemi is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power management. This device operates at a voltage rating of 480V and can handle a continuous current of 51A, making it suitable for high-power applications. With a power dissipation capability of 300W, it is housed in a D2PAK package, which is a surface-mounted configuration that allows for efficient thermal management and compact design in electronic circuits. Its robust construction ensures reliability in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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