IRF710SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 400V 2A D2PAK
MOSFET N-CH 400V 2A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-kanal 400 V 2A (Tc) 3.1W (Ta), 36W (Tc) ytmonterad TO-263 (D2PAK)
N-kanal 400 V 2A (Tc) 3.1W (Ta), 36W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF710SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 2A. It is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 36W. The device exhibits low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
The IRF710SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 2A. It is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 36W. The device exhibits low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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