IRF710SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 400V 2A D2PAK
MOSFET N-CH 400V 2A D2PAK
Detailed specification
Detailed specification
N-Channel 400 V 2A (Tc) 3.1W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 400 V 2A (Tc) 3.1W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF710SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 2A. It is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 36W. The device exhibits low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
The IRF710SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 2A. It is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 36W. The device exhibits low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.C