IRF530SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 14A TO263
MOSFET N-CH 100V 14A TO263
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Ytmonterad TO-263 (D2PAK)
N-Kanal 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF530SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 14A. It features a low on-state resistance (RDS(on)) of 0.16Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a TO-263 package, capable of dissipating up to 88W at Tc. It operates efficiently at temperatures up to 175°C and supports fast switching capabilities.
The IRF530SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 14A. It features a low on-state resistance (RDS(on)) of 0.16Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a TO-263 package, capable of dissipating up to 88W at Tc. It operates efficiently at temperatures up to 175°C and supports fast switching capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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